Solid state devices and materialsARAKAWA, Yasuhiko; ARIMOTO, Yoshihiro; NATORI, Kenji et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, issn 0021-4922, 689 p., 1Conference Proceedings

Solid state devices and materialsTARUCHA, SEIGO; ARAKAWA, YASUHIKO; SHIRAKI, YASUHIRO et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, issn 0021-4922, 736 p., 1Conference Proceedings

Solid state devices and materialsARAKAWA, Yasuhiko; FUKUI, Takashi; TSUBOUCHI, Kazuo et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, issn 0021-4922, 814 p., 1Conference Proceedings

Carrier transport in nanodevicesFERRY, D. K; AKIS, R; OCHIAI, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1841-1845, issn 0021-4922, 1Conference Paper

Imprint in ferroelectric capacitorsWARREN, W. L; TUTTLE, B. A; DIMOS, D et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1521-1524, issn 0021-4922, 1Conference Paper

Capacitance of nanostructuresOHBA, T; NATORI, K.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1366-1369, issn 0021-4922, 1Conference Paper

A novel shallow trench isolation techniqueCHENG, J.-Y; LEI, T. F; CHAO, T. S et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1319-1324, issn 0021-4922, 1Conference Paper

Improvement of current injection of porous siliconCHEN, Y.-A; LIANG, N.-Y; LAIH, L.-H et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1574-1577, issn 0021-4922, 1Conference Paper

Phototransistors using point contact structuresNAGAMUNE, Y; NODA, T; OHNO, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1955-1957, issn 0021-4922, 1Conference Paper

Clarification of nitridation effect on oxide formation methodsKUROI, T; SHIRAHATA, M; OKUMURA, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1454-1459, issn 0021-4922, 1Conference Paper

Estimation of cotunneling in single-electron logic and its suppressionAMAKAWA, S; FUKUI, H; FUJISHIMA, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1146-1150, issn 0021-4922, 1Conference Paper

Characteristics of the oxidation barrier layers for copper metallizationKYUNG-IL LEE; KYUNG-IK MIN; SEUNG-KI JOO et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1016-1020, issn 0021-4922, 1Conference Paper

Electronic chaos in silicon thyristorHOH, K; YASUDA, Y.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 594-598, issn 0021-4922, 1Conference Paper

Preoxide-controlled oxidation for very thin oxide filmsMAKIHARA, K; TERAMOTO, A; NAKAMURA, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 294-297, issn 0021-4922, 1Conference Paper

Study of submicron SrTiO₃ patterningAOKI, H; HASHIMOTO, T; IKAWA, E et al.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 376-379, issn 0021-4922, 1Conference Paper

Electrical properties of ferroelectric gate HEMT structuresOHMI, S.-I; YOSHIHARA, M; OKAMOTO, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1254-1257, issn 0021-4922, 1Conference Paper

Preferential nucleation of nanocrystalline silicon along microstepsOTOBE, M; KAWAHARA, J; ODA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1325-1328, issn 0021-4922, 1Conference Paper

Tungsten gate technology for quarter-micron applicationNODA, H; SAKIYAMA, H; GOTO, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 807-811, issn 0021-4922, 1Conference Paper

Stand-alone hardware-based learning systemCLARKSON, T; CHI KWONG NG.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1050-1055, issn 0021-4922, 1Conference Paper

Surface structures and photoluminescence mechanisms of porous SiSUDA, Y; BAN, T; KOIZUMI et al.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 581-585, issn 0021-4922, 1Conference Paper

Dislocation-free silicon on sapphire by wafer bondingABE, T; OHKI, K; UCHIYAMA, A et al.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 514-518, issn 0021-4922, 1Conference Paper

Diffusion and segregation of carbon in SiO₂ filmsMIZUSHIMA, I; KAMIYA, E; KASHIWAGI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1465-1468, issn 0021-4922, 1Conference Paper

Plasma immersion ion implantation for electronic materialsJONES, E. C; LINDER, B. P; CHEUNG, N. W et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1027-1036, issn 0021-4922, 1Conference Paper

Properties of stoichiometric silicon oxynitride filmsNE, L.-N; INOKUMA, T; HASEGAWA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1503-1508, issn 0021-4922, 1Conference Paper

Resistance oscillations induced by direct current electromigrationSHINGUBARA, S; FUJIKI, K; SANO, A et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1030-1036, issn 0021-4922, 1Conference Paper